Description
NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S
NTE337 NPN Silicon RF Transistor 18V@2A, 8W Max ~ 27 to 50MHz. RF-38S Package
The NTE337 is a silicon NPN RF power transistor designed for use in large signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies up to 80MHz.
Replaces ECG337
Specified 12.5 Volt, 50MHz Characteristics:
- Collector-Emitter Voltage Vceo: 18V Maximum
- Collector Current Ic: 2 Amps
- Output Power: 8 Watts
- Minimum Gain: 10dB
- Package: RF-38S