NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164) Online

$7.59

SKU: US-3782291456074 Categories: ,
Description

Description

NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)

NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)

FEATURES:

  • NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS
  • Maximum Access Time: 150ns
  • 65,536 x 1 Organization
  • Single +5V Supply (10% Tolerance)
  • Upward Pin Compatible with 4116 (16K Dynamic RAM)
  • Max Access Time from RAS: Less than 150ns
  • Min Cycle Time (Read or Write): Less than 260ns
  • Long Refresh Period: 4 milliseconds
  • Low Refresh Overhead Time: As Low As 1.8% of Total Refresh Period
  • All Inputs, Outputs, Clocks Fully TTL Compatible
  • 3−State Unlatched Outputs
  • Page−Mode Operation for Faster Access
  • Low Power Dissipation: Operating – 135mW (Typ); Standby – 17.5mW (Typ)
  • 16 Pin DIP Package
  • Replaces ECG4164
Shipping & Delivery

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