Description
NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)
NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)
FEATURES:
- NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS
- Maximum Access Time: 150ns
- 65,536 x 1 Organization
- Single +5V Supply (10% Tolerance)
- Upward Pin Compatible with 4116 (16K Dynamic RAM)
- Max Access Time from RAS: Less than 150ns
- Min Cycle Time (Read or Write): Less than 260ns
- Long Refresh Period: 4 milliseconds
- Low Refresh Overhead Time: As Low As 1.8% of Total Refresh Period
- All Inputs, Outputs, Clocks Fully TTL Compatible
- 3−State Unlatched Outputs
- Page−Mode Operation for Faster Access
- Low Power Dissipation: Operating – 135mW (Typ); Standby – 17.5mW (Typ)
- 16 Pin DIP Package
- Replaces ECG4164