Description
NTE311 NPN Silicon RF Transistor 55V@400mA, 1W Max ~ 800MHz. TO-39 (ECG311)
NTE311 NPN Silicon RF Transistor 55V@400mA, 1W Max ~ 800MHz TO-39 Package (ECG311)
The NTE311 is designed for Frequency Multiplier, Oscillator, Driver and Pre-Driver VHF/UHF Applications up to 800MHz.
Test Specified 28 Volt, 175MHz Characteristics:
- Collector−Base Voltage, Vcbo: 55V
- Collector-Emitter Voltage Vceo: 30V
- Emitter−Base Voltage, Vebo: 3.5V
- Collector Current Ic: 400mA
- Output Power, Po: 1 Watt
- Input Power, Pi: 0.1 Watt
- Total Device Dissapation, Ptot: 5W
- Minimum Gain: 10dB Minimum
- Current–Gain Bandwidth Product, Ft: 800MHz
- Case: TO-39
- Replaces ECG311